Garbinski, P.A. : rechercher sur Z-Library

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1

Some key differences between a happy life and a meaningful life

Baumeister, Roy F., Vohs, Kathleen D., Aaker, Jennifer L., Garbinsky, Emily N.

Journal:

The Journal of Positive Psychology

Année:

2013

Langue:

english

Fichier:

PDF, 198 KB

english, 2013

2

Cultivating admiration in brands: Warmth, competence, and landing in the “golden quadrant”

Jennifer L. Aaker, Emily N. Garbinsky, Kathleen D. Vohs

Journal:

Journal of Consumer Psychology

Année:

2012

Langue:

english

Fichier:

PDF, 168 KB

english, 2012

3

Some Key Differences between a Happy Life and a Meaningful Life

Baumeister, Roy, Vohs, Kathleen, Aaker, Jennifer Lynn, Garbinsky, Emily N.

Journal:

SSRN Electronic Journal

Année:

2012

Langue:

english

Fichier:

PDF, 242 KB

english, 2012

4

Love, Lies, and Money: Financial Infidelity in Romantic Relationships

Garbinsky, Emily N, Gladstone, Joe J, Nikolova, Hristina, Olson, Jenny G, Broniarczyk, Susan M

Journal:

Journal of Consumer Research

Année:

2019

Langue:

english

Fichier:

PDF, 717 KB

english, 2019

5

Interference of the End: Why Recency Bias in Memory Determines When a Food Is Consumed Again

Garbinsky, E. N., Morewedge, C. K., Shiv, B.

Journal:

Psychological Science

Année:

2014

Langue:

english

Fichier:

PDF, 598 KB

english, 2014

6

Money in the Bank: Feeling Powerful Increases Saving

Garbinsky, Emily N., Klesse, Anne-Kathrin, Aaker, Jennifer

Journal:

Journal of Consumer Research

Année:

2014

Langue:

english

Fichier:

PDF, 396 KB

english, 2014

7

Monolithically integrated InGaAs-P-I-N InP-MISFET PINFET grown by chloride vapor phase epitaxy

Antreasyan, A., Garbinski, P.A., Mattera, V.D., Jr., Temkin, H., Olsson, N.A., Filipe, J.

Journal:

IEEE Photonics Technology Letters

Année:

1989

Langue:

english

Fichier:

PDF, 278 KB

english, 1989

8

Monolithically integrated InGaAs/InP MSM-FET photoreceiver prepared by chemical beam epitaxy

Yang, L., Sudbo, A.S., Tsang, W.T., Garbinski, P.A., Camarda, R.M.

Journal:

IEEE Photonics Technology Letters

Année:

1990

Langue:

english

Fichier:

PDF, 372 KB

english, 1990

9

Does liking or wanting determine repeat consumption delay?

Garbinsky, Emily N., Morewedge, Carey K., Shiv, Baba

Journal:

Année:

2014

Langue:

english

Fichier:

PDF, 436 KB

english, 2014

10

Ga0.47In0.53As ultrahigh gain, high sensitivity photoconductors grown by chloride vapor-phase epitaxy

Antreasyan, A., Garbinski, P. A., Mattera, V. D., Olsson, N. A., Temkin, H.

Journal:

Journal of Applied Physics

Année:

1986

Langue:

english

Fichier:

PDF, 477 KB

english, 1986

11

Promoting employee ownership: a look at the states

Wiefek, Nancy, Rosen, Corey, Garbinsky, Timothy

Journal:

Journal of Participation and Employee Ownership

Année:

2019

Fichier:

PDF, 128 KB

2019

12

EXPRESS: Popping the Positive Illusion of Financial Responsibility Can Increase Personal Savings: Applications in Emerging and Western Markets

Garbinsky, Emily N., Mead, Nicole L., Gregg, Daniel

Journal:

Journal of Marketing

Année:

2020

Fichier:

PDF, 1.42 MB

2020

13

Monolithically integrated InGaAs/InP MSM-FET photo-receiver prepared by chemical beam epitaxy

L. Yang, A.S. Sudbo, W.T. Tsang, P.A. Garbinski, R.M. Camarda

Journal:

Journal of Crystal Growth

Année:

1990

Langue:

english

Fichier:

PDF, 491 KB

english, 1990

14

Books for Adolescents

Megan Garbinski, Leann Higbee, Laura Turchi, Maxym Martineau, Rebecca Hoffman, Samantha Vélez, Mea Valli-Dougherty, Michelle Martin, Lauren Prevallet, Meghan Cassidy, Sunday Cummins, James Blasingame

Journal:

Journal of Adolescent & Adult Literacy

Année:

2012

Langue:

english

Fichier:

PDF, 280 KB

english, 2012

15

High-speed enhancement-mode InP MISFET's grown by chloride vapor-phase epitaxy

Antreasyan, A., Garbinski, P.A., Mattera, V.D., Jr., Feuer, M.D., Temkin, H., Filipe, J.

Journal:

IEEE Transactions on Electron Devices

Année:

1989

Langue:

english

Fichier:

PDF, 668 KB

english, 1989

16

Multiterminal light-emitting logic device electrically reprogrammable between OR and NAND functions

Mastrapasqua, M., Luryi, S., Belenky, G.L., Garbinski, P.A., Cho, A.Y., Sivco, D.L.

Journal:

IEEE Transactions on Electron Devices

Année:

1993

Langue:

english

Fichier:

PDF, 693 KB

english, 1993

17

Direct measurement of the carrier leakage out of the active region in InGaAsP/InP laser heterostructures

Belenky, G.L., Kazarinov, R.F., Lopata, J., Luryi, S., Tanbun-Elk, T., Garbinski, P.A.

Journal:

IEEE Transactions on Electron Devices

Année:

1995

Langue:

english

Fichier:

PDF, 400 KB

english, 1995

18

Quench of hot-electron real space transfer by electronic screening

Liu, C.-T., Luryi, S., Garbinski, P.A., Cho, A.Y., Sivco, D.L.

Journal:

IEEE Transactions on Electron Devices

Année:

1991

Langue:

english

Fichier:

PDF, 589 KB

english, 1991

19

IIA-2 a high sensitivity majority carrier photodetector

Chen, C.Y., Cho, A.Y., Garbinski, P., Bethea, C.G.

Journal:

IEEE Transactions on Electron Devices

Année:

1981

Langue:

english

Fichier:

PDF, 184 KB

english, 1981

20

VIA-5 a modulation-doped Ga0.47In0.53As photoconductive detector for 1.0-1.6µm applications

Chen, C.Y., Pang, Y.M., Alavi, K., Cho, A.Y., Garbinski, P.A.

Journal:

IEEE Transactions on Electron Devices

Année:

1983

Langue:

english

Fichier:

PDF, 117 KB

english, 1983

21

Gigahertz logic based on InP metal-insulator-semiconductor field-effect transistors by vapor phase epitaxy

Antreasyan, A., Garbinski, P.A., Mattera, V.D., Jr., Wiesenfeld, J.M., Tucker, R.S., Shah, N.J., DiGiuseppe, M.A.

Journal:

IEEE Transactions on Electron Devices

Année:

1987

Langue:

english

Fichier:

PDF, 1.18 MB

english, 1987

22

Monolithic integration of InGaAsP/InP semiconductor lasers using the stop-cleaving technique

Antreasyan, A., Napholtz, S., Wilt, D., Garbinski, P.

Journal:

IEEE Journal of Quantum Electronics

Année:

1986

Langue:

english

Fichier:

PDF, 2.79 MB

english, 1986

23

Short channel Ga0.47In0.53As/Al0.48In0.52As selectively doped field effect transistors

C. Chen, A. Cho, K. Alavi, P. Garbinski

Journal:

IEEE Electron Device Letters

Année:

1982

Langue:

english

Fichier:

PDF, 404 KB

english, 1982

24

Characteristics of an In0.53Ga0.47As very shallow junction gate structure grown by molecular beam epitaxy

Chen, C.Y., Cho, A.Y., Garbinski, P.A., Cheng, K.Y.

Journal:

IEEE Electron Device Letters

Année:

1982

Langue:

english

Fichier:

PDF, 454 KB

english, 1982

25

Depletion mode modulation doped Al0.48In0.52As-Ga0.47In0.53As heterojunction field effect transistors

Chen, C.Y., Cho, A.Y., Cheng, K.Y., Pearsall, T.P., O'Connor, P., Garbinski, P.A.

Journal:

IEEE Electron Device Letters

Année:

1982

Langue:

english

Fichier:

PDF, 504 KB

english, 1982

26

[IRE 1981 International Electron Devices Meeting - ()] 1981 International Electron Devices Meeting - A depletion stop double base phototransistor: A demonstration of a new transistor structure

Chen, C.Y., Cho, A.Y., Garbinski, P.A., Bethea, C.G.

Année:

1981

Langue:

english

Fichier:

PDF, 256 KB

english, 1981

27

[IEEE IEEE International Electron Devices Meeting - Washington, DC, USA (5-8 Dec. 1993)] Proceedings of IEEE International Electron Devices Meeting - Microwave studies of self-aligned top-collector charge injection transistors

Belenky, G.L., Garbinski, P.A., Smith, P.R., Luryi, S., Cho, A.Y., Hamm, R., Sivco, D.L.

Année:

1993

Langue:

english

Fichier:

PDF, 327 KB

english, 1993

28

High-speed operation of InP metal-insulator-semiconductor field-effect transistors grown by chloride vapor phase epitaxy

A. Antreasyan, P. A. Garbinski, V. D. Mattera, H. Temkin, J. H. Abeles

Année:

1987

Langue:

english

Fichier:

PDF, 623 KB

english, 1987

29

Enhancement mode InP metal-insulator-semiconductor field-effect transistors grown by chemical beam epitaxy

A. Antreasyan, W. T. Tsang, P. A. Garbinski

Année:

1986

Langue:

english

Fichier:

PDF, 487 KB

english, 1986

30

Measurement of the effective temperature of majority carriers under injection of hot minority carriers in heterostructures

G. L. Belenky, A. Kastalsky, S. Luryi, P. A. Garbinski, A. Y. Cho, D. L. Sivco

Année:

1994

Langue:

english

Fichier:

PDF, 562 KB

english, 1994

31

Monolithically integrated InGaAs p-i-n InP-MISFET PINFET grown by chloride vapor phase epitaxy

Antreasyan, A., Garbinski, P.A., Mattera, V.D., Temkin, H., Olson, N.A., Filipe, J.

Journal:

IEEE Transactions on Electron Devices

Année:

1989

Langue:

english

Fichier:

PDF, 152 KB

english, 1989

32

[IEEE International Technical Digest on Electron Devices - San Francisco, CA, USA (9-12 Dec. 1990)] International Technical Digest on Electron Devices - Microwave operation of InGaAs/InAlAs charge injection transistors

Mensz, P.M., Schumacher, H., Garbinski, P.A., Cho, A.Y., Sivco, D.L., Luryi, S.

Année:

1990

Langue:

english

Fichier:

PDF, 285 KB

english, 1990

33

High-speed enhancement mode InP metal-insulator-semiconductor field-effect transistors exhibiting very high transconductance

Antreasyan, A., Garbinski, P. A., Mattera, V. D., Temkin, H.

Journal:

Applied Physics Letters

Année:

1986

Langue:

english

Fichier:

PDF, 490 KB

english, 1986

34

Steady-state photovoltaic effect in asymmetrical graded superlattices

Liu, C. T., Liu, J. M., Garbinski, P. A., Luryi, S., Sivco, D. L., Cho, A. Y.

Journal:

Physical Review Letters

Année:

1991

Langue:

english

Fichier:

PDF, 562 KB

english, 1991

35

Back-side illuminated Ga0.47In0.53As photoconductive detectors and associated dark zones

Chen, C. Y., Cox, H. M., Garbinski, P. A., Hummel, S. G.

Journal:

Applied Physics Letters

Année:

1984

Langue:

english

Fichier:

PDF, 470 KB

english, 1984

36

Interdigitated Al0.48In0.52As/Ga0.47In0.53As photoconductive detectors

C. Y. Chen, Y. M. Pang, K. Alavi, A. Y. Cho, P. A. Garbinski

Année:

1984

Langue:

english

Fichier:

PDF, 461 KB

english, 1984

37

[IRE 1983 International Electron Devices Meeting - ()] 1983 International Electron Devices Meeting - Removing long tails from photoconductive detectors: A new minority hole sinked photodetector

Chen, C.Y., Pang, Y.M., Cho, A.Y., Garbinski, P.A.

Année:

1983

Langue:

english

Fichier:

PDF, 438 KB

english, 1983

38

Spatial resolution of the capacitance-voltage profiling technique on semiconductors with quantum confinement

Schubert, E. F., Kopf, R. F., Kuo, J. M., Luftman, H. S., Garbinski, P. A.

Journal:

Applied Physics Letters

Année:

1990

Langue:

english

Fichier:

PDF, 559 KB

english, 1990

39

Electro-optic sampling measurements of high-speed InP integrated circuits

Wiesenfeld, J. M., Tucker, R. S., Antreasyan, A., Burrus, C. A., Taylor, A. J., Mattera, V. D., Garbinski, P. A.

Journal:

Applied Physics Letters

Année:

1987

Langue:

english

Fichier:

PDF, 518 KB

english, 1987

40

High-speed junction-depleted Ga0.47In0.53As photoconductive detectors

Chen, C. Y., Dentai, A. G., Kasper, B. L., Garbinski, P. A.

Journal:

Applied Physics Letters

Année:

1985

Langue:

english

Fichier:

PDF, 462 KB

english, 1985

41

A new Ga0.47In0.53As field-effect transistor with a lattice-mismatched GaAs gate for high-speed circuits

Chen, C.Y., Cho, A.Y., Garbinski, P.A.

Journal:

IEEE Electron Device Letters

Année:

1985

Langue:

english

Fichier:

PDF, 365 KB

english, 1985

42

Reduction of fall times in Ga0.47In0.53As photoconductive receivers through back gating

Chen, C. Y., Cho, A. Y., Olsson, N. A., Garbinski, P. A.

Journal:

Applied Physics Letters

Année:

1985

Langue:

english

Fichier:

PDF, 464 KB

english, 1985

43

[IRE 1987 International Electron Devices Meeting - ()] 1987 International Electron Devices Meeting - High-speed enhancement mode InP MISFETs grown by Chloride vapor phase epitaxy

Antreasyan, A., Garbinski, P.A., Mattera, V.D., Temkin, H., Abeles, J.H., Filipe, J.

Année:

1987

Langue:

english

Fichier:

PDF, 367 KB

english, 1987

44

Monolithic InGaAs p-i-n InP metal-insulator-semiconductor field-effect transistor receiver for long-wavelength optical communications

Mattera, V. D., Antreasyan, A., Garbinski, P. A., Temkin, H., Olsson, N. A., Filipe, J.

Journal:

Applied Physics Letters

Année:

1990

Langue:

english

Fichier:

PDF, 470 KB

english, 1990

45

Monolithic integrated receiver front end consisting of a photoconductive detector and a GaAs selectively doped heterostructure transistor

Chen, C. Y., Olsson, N. A., Tu, C. W., Garbinski, P. A.

Journal:

Applied Physics Letters

Année:

1985

Langue:

english

Fichier:

PDF, 485 KB

english, 1985

46

High transconductance and large peak-to-valley ratio of negative differential conductance in three-terminal InGaAs/InAlAs real-space transfer devices

Mensz, Piotr M., Garbinski, Paul A., Cho, Alfred Y., Sivco, Deborah L., Luryi, Serge

Journal:

Applied Physics Letters

Année:

1990

Langue:

english

Fichier:

PDF, 552 KB

english, 1990

47

High-speed InP/InGaAsP metal-semiconductor field-effect transistors grown by chloride vapor phase epitaxy

Antreasyan, A., Garbinski, P. A., Mattera, V. D., Feuer, M. D., Filipe, J., Chu, S. N. G.

Journal:

Applied Physics Letters

Année:

1989

Langue:

english

Fichier:

PDF, 426 KB

english, 1989

48

[IEEE Proceedings of IEEE International Electron Devices Meeting - San Francisco, CA, USA (1989.12.3-1989.12.6)] International Technical Digest on Electron Devices Meeting - Multi-terminal light emitting logic device electrically reprogrammable between OR and NAND functions

Mastrapasqua,, Luryi,, Belenky,, Garbinski,, Cho,, Sivco,

Année:

1992

Langue:

english

Fichier:

PDF, 371 KB

english, 1992

49

Charge injection logic

Luryi, Serge, Mensz, Piotr M., Pinto, Mark R., Garbinski, Paul A., Cho, Alfred Y., Sivco, Deborah L.

Journal:

Applied Physics Letters

Année:

1990

Langue:

english

Fichier:

PDF, 525 KB

english, 1990

50

Short pulse transfer characteristics of Al/sub x/Ga/sub 1-x/As/GaAs and Al/sub x/Ga/sub 1-x/As/In/sub y/Ga/sub 1-y/As modulation-doped heterojunction FET's

Chandra, A., Garbinski, P.A., Shah, N.J., Kuo, J.-M., Kopf, R.F., Smith, P.R.

Journal:

IEEE Electron Device Letters

Année:

1990

Langue:

english

Fichier:

PDF, 254 KB

english, 1990